Enhanced InP-based Gunn Diodes with Notch-d-doped Structure for Low-THz Applications

HIGH Q InP-BASED VARACTOR DIODES

We report on high quality-factor Heterostructure Barrier Varactor making benefit of epitaxial stacking and planar integration, with a cut-off frequency in the far infrared region. To this aim, high doping concentrations in the depletion (2x10 17 cm) and contact (1x10 cm) InGaAs regions lattice matched to an InP substrate and an InAlAs/AlAs blocking barrier scheme were used. Planar integration o...

InP-Based Cylindrical Microcavity Light-Emitting Diodes

We have investigated the properties of InP-based microcavity light-emitting diodes ( = 1 6 m). Our objective was mainly to study the effects of lateral confinement of optical modes, which was achieved by the wet oxidation of double In0 52Al0 48As layers. The smallest devices had a cavity radius of 0.5 m, which becomes comparable to where is the effective refractive index of the photon emitting ...

Heavily carbon-doped GaAsSb grown on InP for HBT applications

We present the results of Hall measurements on heavily carbon-doped GaAsSb epilayers grown by metalorganic chemical vapour deposition (MOVPE) on InP substrates. An extremely strong alloy scattering e!ect is observed in this material, dominating the Hall mobility even at doping levels in the 1019 range. This e!ect is due to the very large (1 eV) valence band o!set between GaAs and GaSb. Despite ...

THz resonant-tunneling diodes

Enhanced Performance of Quantum Dot-Based Light-Emitting Diodes with Gold Nanoparticle-Doped Hole Injection Layer

UNLABELLED In this paper, the performance of quantum dot-based light-emitting diodes (QLEDs) comprising ZnCdSe/ZnS core-shell QDs as an emitting layer were enhanced by employing Au-doped poly(3,4-ethylenedioxythiophene)/polystyrene sulfonate ( PEDOT PSS) hole injection layer (HIL). By varying the concentration and dimension of Au nanoparticle (NP) dopants in PEDOT PSS, the optimal devices w...